Revealing the quantum nature of the voltage-induced conductance changes in oxygen engineered yttrium oxide-based RRAM devices
揭示氧工程化氧化钇基RRAM器件中电压诱导电导变化的量子特性
期刊:Scientific Reports
影响因子:3.9
doi:10.1038/s41598-023-49924-2
Aguirre, F L; Piros, E; Kaiser, N; Vogel, T; Petzold, S; Gehrunger, J; Hochberger, C; Oster, T; Hofmann, K; Suñé, J; Miranda, E; Alff, L
