日期 影响因子
日期:
2020 年 — 2026 年
2020
2021
2022
2023
2024
2025
2026
影响因子:
–

Fast photo-carrier multiplication by engineered potential trap in MoS(2)/Ge double junction phototransistor

利用 MoS(2)/Ge 双结光电晶体管中设计的势阱实现快速光生载流子倍增

期刊:Scientific Reports
影响因子:3.9
doi:10.1038/s41598-026-35134-z
Park, Youngseo; Jung, Minhyeok; Jeong, Han Beom; Jeong, Hu Young; Sim, Sangwan; Yoo, Geonwook; Heo, Junseok
发表日期：2026
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Monolithically-Integrated van der Waals Synaptic Memory via Bulk Nano-Crystallization

通过体纳米晶化实现单片集成范德华突触存储器

期刊:Advanced Science
影响因子:14.1
doi:10.1002/advs.202510961
Lee, Jinhyoung; Kim, Gunhyoung; Seok, Hyunho; Han, Sujeong; Shim, Hyunwoo; Cha, Yoonmi; Son, Sihoon; Choi, Hyunbin; Grzeszczyk, Magdalena; Bogucki, Aleksander; Choi, Yunseok; Kim, Seungil; Lee, Hyeonjeong; Park, Chaerin; Kim, Geonwook; Hwang, Hosin; Kim, Hyunho; Lee, Dongho; Son, Seowoo; Back, Geumji; Shin, Hyelim; Choi, Donghwan; Ollier, Alexina; Kim, Yeon-Ji; Fang, Lei; Han, Gyuho; Jung, Goo-Eun; Lee, Youngi; Kim, Hyeong-U; Watanabe, Kenji; Taniguchi, Takashi; Bae, Sanghoon; Heinrich, Andreas; Jang, Won-Jun; Kim, Taesung
神经科学
发表日期：2025
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Artificial Room-Temperature Ferromagnetism of Bulk van der Waals VSe(2)

块状范德华VSe(2)的室温人工铁磁性

期刊:Advanced Science
影响因子:14.1
doi:10.1002/advs.202504746
Lee, Jinhyoung; Kim, Gunhyoung; Seok, Hyunho; Choi, Hyunbin; Lee, Hyeonjeong; Lee, Seokchan; Kim, Geonwook; Kim, Hyunho; Son, Seowoo; Son, Sihoon; Lee, Dongho; Hwang, Hosin; Shin, Hyelim; Han, Sujeong; Back, Geumji; Ollier, Alexina; Kim, Yeon-Ji; Fang, Lei; Han, Gyuho; Jung, Goo-Eun; Lee, Youngi; Kim, Hyeong-U; Watanabe, Kenji; Taniguchi, Takashi; Shin, Wonjun; Cheema, Suraj; Heinrich, Andreas; Jang, Won-Jun; Kim, Taesung
发表日期：2025
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Enhanced UVC Responsivity of Heteroepitaxial α-Ga(2)O(3) Photodetector with Ultra-Thin HfO(2) Interlayer

具有超薄HfO₂中间层的异质外延α-Ga₂O₃光电探测器的UVC响应增强

期刊:Micromachines
影响因子:3
doi:10.3390/mi16070836
Yoon, SiSung; Oh, SeungYoon; Lee, GyuHyung; Kim, YongKi; Kim, SunJae; Park, Ji-Hyeon; Shin, MyungHun; Jeon, Dae-Woo; Yoo, GeonWook
发表日期：2025
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Network of artificial olfactory receptors for spatiotemporal monitoring of toxic gas

用于有毒气体时空监测的人工嗅觉受体网络

期刊:Science Advances
影响因子:12.5
doi:10.1126/sciadv.adr2659
Baek, Yongmin; Bae, Byungjoon; Yang, Jeongyong; Cho, Wonjun; Sim, Inbo; Yoo, Geonwook; Chung, Seokhyun; Heo, Junseok; Lee, Kyusang
信号转导
发表日期：2024
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Heterogeneous integration of high-k complex-oxide gate dielectrics on wide band-gap high-electron-mobility transistors

高介电常数复合氧化物栅极介质在宽带隙高电子迁移率晶体管上的异质集成

期刊:Transplantation
影响因子:5
doi:10.1097/TP.0000000000004671
DiToro, Daniel; Murakami, Naoka; Pillai, Shiv; Ji, Jongho; Yang, Jeong Yong; Lee, Sangho; Kim, Seokgi; Yeom, Min Jae; Lee, Gyuhyung; Shin, Heechang; Bae, Sang-Hoon; Ahn, Jong-Hyun; Kim, Sungkyu; Kim, Jeehwan; Yoo, Geonwook; Kum, Hyun S
发表日期：2024
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A 2.8 kV Breakdown Voltage α-Ga(2)O(3) MOSFET with Hybrid Schottky Drain Contact

具有混合肖特基漏极接触的2.8 kV击穿电压α-Ga₂O₃ MOSFET

期刊:Micromachines
影响因子:3
doi:10.3390/mi15010133
Oh, Seung Yoon; Jeong, Yeong Je; Kang, Inho; Park, Ji-Hyeon; Yeom, Min Jae; Jeon, Dae-Woo; Yoo, Geonwook
发表日期：2024
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An artificial neuromuscular junction for enhanced reflexes and oculomotor dynamics based on a ferroelectric CuInP(2)S(6)/GaN HEMT

一种基于铁电CuInP₂S₆/GaN HEMT的人工神经肌肉接头，用于增强反射和眼动动力学。

期刊:Science Advances
影响因子:12.5
doi:10.1126/sciadv.adh9889
Park, Minseong; Yang, Jeong Yong; Yeom, Min Jae; Bae, Byungjoon; Baek, Yongmin; Yoo, Geonwook; Lee, Kyusang
发表日期：2023
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Low Subthreshold Slope AlGaN/GaN MOS-HEMT with Spike-Annealed HfO(2) Gate Dielectric

采用尖峰退火HfO₂栅极介质的低亚阈值斜率AlGaN/GaN MOS-HEMT

期刊:Micromachines
影响因子:3
doi:10.3390/mi12121441
Yeom, Min Jae; Yang, Jeong Yong; Lee, Chan Ho; Heo, Junseok; Chung, Roy Byung Kyu; Yoo, Geonwook
发表日期：2021
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Bias-dependent photoresponsivity of multi-layer MoS(2) phototransistors

多层MoS(2)光电晶体管的偏置依赖性光响应

期刊:Nanoscale Research Letters
影响因子:
doi:10.1186/s11671-017-2368-2
Park, Jinwu; Park, Youngseo; Yoo, Geonwook; Heo, Junseok
发表日期：2017
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