Middle Interlayer Engineered Ferroelectric NAND Flash Overcoming Reliability and Stability Bottlenecks for Next-Generation High-Density Storage Systems
中间层工程化铁电NAND闪存克服下一代高密度存储系统的可靠性和稳定性瓶颈
期刊:Advanced Science
影响因子:14.1
doi:10.1002/advs.202510155
Kim, Giuk; Lee, Sangho; Choi, Hyojun; Jung, Yangjin; Kim, Woongjin; Park, Sanghyun; Seo, Kwangyou; Kim, Kwangsoo; Kim, Wanki; Ha, Daewon; Shin, Mincheol; Ahn, Jinho; Jeon, Sanghun