Comprehensive Research of Total Ionizing Dose Effects in GaN-Based MIS-HEMTs Using Extremely Thin Gate Dielectric Layer
利用极薄栅极介质层对GaN基MIS-HEMT的总电离剂量效应进行综合研究
期刊:Nanomaterials
影响因子:4.3
doi:10.3390/nano10112175
Chang, Sung-Jae; Kim, Dong-Seok; Kim, Tae-Woo; Lee, Jung-Hee; Bae, Youngho; Jung, Hyun-Wook; Kang, Soo Cheol; Kim, Haecheon; Noh, Youn-Sub; Lee, Sang-Heung; Kim, Seong-Il; Ahn, Ho-Kyun; Lim, Jong-Won