Low Trapping Effects and High Electron Confinement in Short AlN/GaN-On-SiC HEMTs by Means of a Thin AlGaN Back Barrier
利用薄AlGaN背势垒实现短AlN/GaN-On-SiC HEMT中的低陷阱效应和高电子限制
期刊:Micromachines
影响因子:3
doi:10.3390/mi14020291
Harrouche, Kathia; Venkatachalam, Srisaran; Ben-Hammou, Lyes; Grandpierron, François; Okada, Etienne; Medjdoub, Farid
