Temperature-Dependent Phase Transition in WS(2) for Reinforcing Band-to-Band Tunneling and Photoreactive Random Access Memory Application
WS(2)中温度相关的相变可增强带间隧穿效应,并应用于光反应随机存取存储器。
期刊:Small Science
影响因子:8.3
doi:10.1002/smsc.202300202
Woo, Gunhoo; Cho, Jinill; Yeom, Heejung; Yoon, Min Young; Eom, Geon Woong; Kim, Muyoung; Mun, Jihun; Lee, Hyo Chang; Kim, Hyeong-U; Yoo, Hocheon; Kim, Taesung