Protocol for doping of an Sn-based two-dimensional perovskite semiconductor by incorporating SnI(4) for field-effect transistors and thermoelectric devices.
通过掺入 SnI(4) 对 Sn 基二维钙钛矿半导体进行掺杂,用于场效应晶体管和热电器件的方案
期刊:STAR Protocols
影响因子:1.3
doi:10.1016/j.xpro.2022.101876
Liu Yu, Chen Ping-An, Qiu Xincan, Guo Jing, Xia Jiangnan, Wei Huan, Xie Haihong, Hou Shijin, He Mai, Wang Xiao, Zeng Zebing, Jiang Lang, Liao Lei, Hu Yuanyuan