High-density via RRAM cell with multi-level setting by current compliance circuits
通过电流限制电路实现多级设置的高密度 RRAM 单元
期刊:Discover Nano
影响因子:4.5
doi:10.1186/s11671-023-03881-x
Hsieh, Yu-Cheng; Lin, Yu-Cheng; Huang, Yao-Hung; Chih, Yu-Der; Chang, Jonathan; Lin, Chrong-Jung; King, Ya-Chin