日期 影响因子
日期:
2020 年 — 2026 年
2020
2021
2022
2023
2024
2025
2026
影响因子:
–

Effects of channel length on temperature dependence of apparent subthreshold swing in self-aligned top-gate coplanar IGZO thin-film transistors

沟道长度对自对准顶栅共面IGZO薄膜晶体管表观亚阈值摆幅温度依赖性的影响

期刊:Scientific Reports
影响因子:3.9
doi:10.1038/s41598-025-18234-0
Oh, Chae-Eun; Jeong, Hwan-Seok; Lee, Su-Hyeon; Lee, Hyeon-Woo; Son, Dong-Hwi; Kim, Chang-Hyeon; Kim, Myeong-Ho; Son, Kyoung-Seok; Lim, Jun Hyung; Song, Sang-Hun; Kwon, Hyuck-In
表观遗传
发表日期：2025
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Analysis of physical mechanisms for channel-length-dependent PBTS reliability in SA TG coplanar IGZO TFTs

SA TG共面IGZO TFT中沟道长度相关的PBTS可靠性的物理机制分析

期刊:Scientific Reports
影响因子:3.9
doi:10.1038/s41598-025-27549-x
Son, Dong-Hwi; Oh, Chae-Eun; Lee, Hyeon-Woo; Jeong, Chan-Yong; Jang, Jae-Man; Ahn, Byung-Du; Bae, Jong-Uk; Kwon, Hyuck-In
发表日期：2025
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Effects of Capping Layers with Different Metals on Electrical Performance and Stability of p-Channel SnO Thin-Film Transistors

不同金属覆盖层对p沟道SnO薄膜晶体管电性能和稳定性的影响

期刊:Micromachines
影响因子:3
doi:10.3390/mi11100917
Shin, Min-Gyu; Bae, Kang-Hwan; Jeong, Hwan-Seok; Kim, Dae-Hwan; Cha, Hyun-Seok; Kwon, Hyuck-In
发表日期：2020
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Oxide Thin-Film Transistor-Based Vertically Stacked Complementary Inverter for Logic and Photo-Sensor Operations

基于氧化物薄膜晶体管的垂直堆叠互补反相器，用于逻辑和光电传感器操作

期刊:Materials
影响因子:3.2
doi:10.3390/ma12233815
Joo, Hyo-Jun; Shin, Min-Gyu; Jung, Hwan-Seok; Cha, Hyun-Seok; Nam, Donguk; Kwon, Hyuck-In
发表日期：2019
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