Thermal stability of hyper-doped n-type Ge and Si(0.15)Ge(0.85) epilayers obtained by in situ doping and pulsed laser melting
通过原位掺杂和脉冲激光熔化法制备的超掺杂n型Ge和Si(0.15)Ge(0.85)外延层的热稳定性
期刊:Journal of Materials Chemistry C
影响因子:5.1
doi:10.1039/d5tc02390d
Faverzani, Marco; Spataro, Giulia Maria; Impelluso, Davide; Calcaterra, Stefano; Di Russo, Enrico; Magnozzi, Michele; Bisio, Francesco; Canepa, Maurizio; Biagioni, Paolo; Isella, Giovanni; Napolitani, Enrico; Frigerio, Jacopo
