Enhanced etch characteristics of EUV PR masked SiON through the ion beam grid pulsing technique
通过离子束栅极脉冲技术增强EUV光刻胶掩模SiON的刻蚀特性
期刊:Scientific Reports
影响因子:3.9
doi:10.1038/s41598-025-04632-x
Kwon, Hae In; Jang, Yun Jong; Kim, Kyoung Chan; Gil, Hong Seong; Kim, Ju Young; Ryu, Seong Hyun; Pyun, Do Seong; Kim, Dae Whan; Park, Woo Chang; Lee, Ji Yeon; Park, Jin Woo; Park, Sang Wuk; Yeom, Geun Young