日期 影响因子
日期:
2020 年 — 2026 年
2020
2021
2022
2023
2024
2025
2026
影响因子:
–

Novel three-dimensional stacked capacitorless DRAM architecture using partially etched nanosheets for high-density memory applications

一种新型三维堆叠式无电容DRAM架构，采用部分蚀刻纳米片，适用于高密度存储应用。

期刊:Discover Nano
影响因子:4.5
doi:10.1186/s11671-025-04201-1
Kim, Min Seok; Lee, Sang Ho; Park, Jin; Bae, Seung Ji; Hong, Jeong Woo; Koh, Won Suk; Yun, Gang San; Jang, Jaewon; Bae, Jin-Hyuk; Kang, In Man
发表日期：2025
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Design of a gate-all-around arch-shaped tunnel-field-effect-transistor-based capacitorless DRAM

基于全包围式拱形隧道场效应晶体管的无电容DRAM设计

期刊:Discover Nano
影响因子:4.5
doi:10.1186/s11671-025-04233-7
Bae, Seung Ji; Lee, Sang Ho; Park, Jin; Kim, Min Seok; Hong, Jeong Woo; Koh, Won Suk; Yun, Gang San; Jang, Jaewon; Bae, Jin-Hyuk; Kang, In Man
发表日期：2025
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Structural Optimization and Trap Effects on the Output Performance of 4H-SiC Betavoltaic Cell

结构优化和陷阱效应对4H-SiC β伏电池输出性能的影响

期刊:Nanomaterials
影响因子:4.3
doi:10.3390/nano15211625
Kim, Kyeong Min; Kang, In Man; Seo, Jae Hwa; Yoon, Young Jun; Kim, Kibeom
发表日期：2025
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Dependence of Positive Bias Stress Instability on Threshold Voltage and Its Origin in Solution-Processed Aluminum-Doped Indium Oxide Thin-Film Transistors

溶液法制备的铝掺杂氧化铟薄膜晶体管正偏压应力不稳定性对阈值电压的依赖性及其成因

期刊:Nanomaterials
影响因子:4.3
doi:10.3390/nano14050466
Na, Jeong-Hyeon; Park, Jun-Hyeong; Park, Won; Feng, Junhao; Eun, Jun-Su; Lee, Jinuk; Lee, Sin-Hyung; Jang, Jaewon; Kang, In Man; Kim, Do-Kyung; Bae, Jin-Hyuk
发表日期：2024
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Organic Memristor-Based Flexible Neural Networks with Bio-Realistic Synaptic Plasticity for Complex Combinatorial Optimization

基于有机忆阻器的柔性神经网络，具有生物真实突触可塑性，可用于复杂组合优化

期刊:Advanced Science
影响因子:14.1
doi:10.1002/advs.202300659
Kim, Hyeongwook; Kim, Miseong; Lee, Aejin; Park, Hea-Lim; Jang, Jaewon; Bae, Jin-Hyuk; Kang, In Man; Kim, Eun-Sol; Lee, Sin-Hyung
神经科学
发表日期：2023
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Room-Temperature High-Detectivity Flexible Near-Infrared Photodetectors with Chalcogenide Silver Telluride Nanoparticles

基于硫系碲化银纳米粒子的室温高探测率柔性近红外光电探测器

期刊:ACS Omega
影响因子:4.3
doi:10.1021/acsomega.1c06870
Lee, Won-Yong; Kim, Kyoungdu; Lee, Sin-Hyung; Bae, Jin-Hyuk; Kang, In-Man; Park, Minsu; Kim, Kwangeun; Jang, Jaewon
发表日期：2022
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Design of a Capacitorless DRAM Based on a Polycrystalline-Silicon Dual-Gate MOSFET with a Fin-Shaped Structure

基于鳍状结构多晶硅双栅MOSFET的无电容DRAM设计

期刊:Nanomaterials
影响因子:4.3
doi:10.3390/nano12193526
An, Hee Dae; Lee, Sang Ho; Park, Jin; Min, So Ra; Kim, Geon Uk; Yoon, Young Jun; Seo, Jae Hwa; Cho, Min Su; Jang, Jaewon; Bae, Jin-Hyuk; Lee, Sin-Hyung; Kang, In Man
发表日期：2022
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3-D stacked polycrystalline-silicon-MOSFET-based capacitorless DRAM with superior immunity to grain-boundary's influence

基于三维堆叠多晶硅MOSFET的无电容DRAM，具有优异的抗晶界干扰能力

期刊:Scientific Reports
影响因子:3.9
doi:10.1038/s41598-022-18682-y
Lee, Sang Ho; Park, Jin; Min, So Ra; Kim, Geon Uk; Jang, Jaewon; Bae, Jin-Hyuk; Lee, Sin-Hyung; Kang, In Man
发表日期：2022
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Analysis for DC and RF Characteristics Recessed-Gate GaN MOSFET Using Stacked TiO(2)/Si(3)N(4) Dual-Layer Insulator

采用堆叠式TiO(2)/Si(3)N(4)双层绝缘层的凹槽栅GaN MOSFET的直流和射频特性分析

期刊:Materials
影响因子:3.2
doi:10.3390/ma15030819
Min, So-Ra; Cho, Min-Su; Lee, Sang-Ho; Park, Jin; An, Hee-Dae; Kim, Geon-Uk; Yoon, Young-Jun; Seo, Jae-Hwa; Jang, Jae-Won; Bae, Jin-Hyuk; Lee, Sin-Hyung; Kang, In-Man
发表日期：2022
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Importance of Structural Relaxation on the Electrical Characteristics and Bias Stability of Solution-Processed ZnSnO Thin-Film Transistors

结构弛豫对溶液制备的 ZnSnO 薄膜晶体管的电气特性和偏置稳定性的重要性

期刊:Nanomaterials
影响因子:
doi:10.3390/nano12183097
Yu-Jin Hwang, Do-Kyung Kim, Sang-Hwa Jeon, Ziyuan Wang, Jaehoon Park, Sin-Hyung Lee, Jaewon Jang, In Man Kang, Jin-Hyuk Bae
发表日期：2022
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