日期 影响因子
日期:
2020 年 — 2026 年
2020
2021
2022
2023
2024
2025
2026
影响因子:
–

Novel three-dimensional stacked capacitorless DRAM architecture using partially etched nanosheets for high-density memory applications

一种新型三维堆叠式无电容DRAM架构，采用部分蚀刻纳米片，适用于高密度存储应用。

期刊:Discover Nano
影响因子:4.5
doi:10.1186/s11671-025-04201-1
Kim, Min Seok; Lee, Sang Ho; Park, Jin; Bae, Seung Ji; Hong, Jeong Woo; Koh, Won Suk; Yun, Gang San; Jang, Jaewon; Bae, Jin-Hyuk; Kang, In Man
发表日期：2025
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Design of a gate-all-around arch-shaped tunnel-field-effect-transistor-based capacitorless DRAM

基于全包围式拱形隧道场效应晶体管的无电容DRAM设计

期刊:Discover Nano
影响因子:4.5
doi:10.1186/s11671-025-04233-7
Bae, Seung Ji; Lee, Sang Ho; Park, Jin; Kim, Min Seok; Hong, Jeong Woo; Koh, Won Suk; Yun, Gang San; Jang, Jaewon; Bae, Jin-Hyuk; Kang, In Man
发表日期：2025
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Structural Optimization and Trap Effects on the Output Performance of 4H-SiC Betavoltaic Cell

结构优化和陷阱效应对4H-SiC β伏电池输出性能的影响

期刊:Nanomaterials
影响因子:4.3
doi:10.3390/nano15211625
Kim, Kyeong Min; Kang, In Man; Seo, Jae Hwa; Yoon, Young Jun; Kim, Kibeom
发表日期：2025
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Formation of Cluster-Structured Metallic Filaments in Organic Memristors for Wearable Neuromorphic Systems with Bio-Mimetic Synaptic Weight Distributions

有机忆阻器中簇状结构金属丝的形成及其在可穿戴神经形态系统中的仿生突触权重分布

期刊:Advanced Science
影响因子:14.1
doi:10.1002/advs.202307494
Jung, Uihoon; Kim, Miseong; Jang, Jaewon; Bae, Jin-Hyuk; Kang, In Man; Lee, Sin-Hyung
神经科学
发表日期：2024
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Capacitorless One-Transistor Dynamic Random-Access Memory with Novel Mechanism: Self-Refreshing

一种采用新型机制的无电容单晶体管动态随机存取存储器：自刷新

期刊:Nanomaterials
影响因子:4.3
doi:10.3390/nano14020179
Lee, Sang Ho; Park, Jin; Yoon, Young Jun; Kang, In Man
发表日期：2024
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Effect of Electrochemically Active Top Electrode Materials on Nanoionic Conductive Bridge Y(2)O(3) Random-Access Memory

电化学活性顶电极材料对纳米离子导电桥Y(2)O(3)随机存取存储器的影响

期刊:Nanomaterials
影响因子:4.3
doi:10.3390/nano14060532
Cho, Yoonjin; Lee, Sangwoo; Heo, Seongwon; Bae, Jin-Hyuk; Kang, In-Man; Kim, Kwangeun; Lee, Won-Yong; Jang, Jaewon
发表日期：2024
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Dependence of Positive Bias Stress Instability on Threshold Voltage and Its Origin in Solution-Processed Aluminum-Doped Indium Oxide Thin-Film Transistors

溶液法制备的铝掺杂氧化铟薄膜晶体管正偏压应力不稳定性对阈值电压的依赖性及其成因

期刊:Nanomaterials
影响因子:4.3
doi:10.3390/nano14050466
Na, Jeong-Hyeon; Park, Jun-Hyeong; Park, Won; Feng, Junhao; Eun, Jun-Su; Lee, Jinuk; Lee, Sin-Hyung; Jang, Jaewon; Kang, In Man; Kim, Do-Kyung; Bae, Jin-Hyuk
发表日期：2024
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Improving the Nonvolatile Memory Characteristics of Sol-Gel-Processed Y(2)O(3) RRAM Devices Using Mono-Ethanolamine Additives

利用单乙醇胺添加剂改善溶胶-凝胶法制备的Y(2)O(3) RRAM器件的非易失性存储特性

期刊:Materials
影响因子:3.2
doi:10.3390/ma17215252
Heo, Seongwon; Choi, Soohyun; Lee, Sangwoo; Cho, Yoonjin; Bae, Jin-Hyuk; Kang, In-Man; Kim, Kwangeun; Lee, Won-Yong; Jang, Jaewon
发表日期：2024
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Organic Memristor-Based Flexible Neural Networks with Bio-Realistic Synaptic Plasticity for Complex Combinatorial Optimization

基于有机忆阻器的柔性神经网络，具有生物真实突触可塑性，可用于复杂组合优化

期刊:Advanced Science
影响因子:14.1
doi:10.1002/advs.202300659
Kim, Hyeongwook; Kim, Miseong; Lee, Aejin; Park, Hea-Lim; Jang, Jaewon; Bae, Jin-Hyuk; Kang, In Man; Kim, Eun-Sol; Lee, Sin-Hyung
神经科学
发表日期：2023
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Simulation of Capacitorless DRAM Based on the Polycrystalline Silicon Nanotube Structure with Multiple Grain Boundaries

基于多晶硅纳米管结构和多晶界的无电容DRAM仿真

期刊:Nanomaterials
影响因子:4.3
doi:10.3390/nano13132026
Park, Jin; Lee, Sang-Ho; Kang, Ga-Eon; Heo, Jun-Hyeok; Jeon, So-Ra; Kim, Min-Seok; Bae, Seung-Ji; Hong, Jeong-Woo; Jang, Jae-Won; Bae, Jin-Hyuk; Lee, Sin-Hyung; Kang, In-Man
发表日期：2023
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