Electronic properties of atomically thin MoS(2) layers grown by physical vapour deposition: band structure and energy level alignment at layer/substrate interfaces
通过物理气相沉积法生长的原子级薄MoS₂层的电子性质：层/衬底界面处的能带结构和能级排列
期刊:RSC Advances
影响因子:4.6
doi:10.1039/c8ra00635k
Bussolotti, Fabio; Chai, Jainwei; Yang, Ming; Kawai, Hiroyo; Zhang, Zheng; Wang, Shijie; Wong, Swee Liang; Manzano, Carlos; Huang, Yuli; Chi, Dongzhi; Goh, Kuan Eng Johnson
