日期 影响因子
日期:
2020 年 — 2026 年
2020
2021
2022
2023
2024
2025
2026
影响因子:
–

Tunable Switching Mechanisms in HfZrO(2)-Based Tunnel Junctions for High-Performance Synaptic Arrays

用于高性能突触阵列的基于HfZrO(2)的隧道结中的可调谐开关机制

期刊:Advanced Science
影响因子:14.1
doi:10.1002/advs.202516478
You, Jiwon; Kim, Jeong-Han; Song, Minsuk; Kwak, Been; Park, Eun Chan; Nguyen, Manh-Cuong; Shin, Wonjun; Kim, Jangsaeng; Kwon, Daewoong
神经科学
发表日期：2026
文献求助 收藏

Analysis of vertical AND flash memory for energy-efficient, scalable, fast CIM beyond vertical NAND flash memory

分析垂直AND闪存，以实现节能、可扩展、快速的CIM，超越垂直NAND闪存

期刊:Nano Convergence
影响因子:11
doi:10.1186/s40580-026-00547-z
Ko, Jonghyun; Im, Jiseong; Park, Sung-Ho; Gu, Jahyun; Cho, Joonhyung; Hwang, Joon; Koo, Ryun-Han; Kim, Jangsaeng; Woo, Sung Yun; Lee, Jong-Ho
发表日期：2026
文献求助 收藏

Ferroelectric NAND for efficient hardware bayesian neural networks

用于高效硬件贝叶斯神经网络的铁电NAND

期刊:Nature Communications
影响因子:15.7
doi:10.1038/s41467-025-61980-y
Song, Minsuk; Koo, Ryun-Han; Kim, Jangsaeng; Han, Chang-Hyeon; Yim, Jiyong; Ko, Jonghyun; Yoo, Sijung; Choe, Duk-Hyun; Kim, Sangwook; Shin, Wonjun; Kwon, Daewoong
发表日期：2025
文献求助 收藏

Harnessing chaotic bifurcation in positive feedback transistors for secure and scalable random key generation

利用正反馈晶体管中的混沌分岔实现安全且可扩展的随机密钥生成

期刊:Nature Communications
影响因子:15.7
doi:10.1038/s41467-025-66398-0
Im, Jiseong; Ko, Jonghyun; Im, Jisung; Hwang, Joon; Koo, Ryun-Han; Park, Sung-Ho; Kim, Jangsaeng; Shin, Wonjun; Woo, Sung Yun; Lee, Jong-Ho
发表日期：2025
文献求助 收藏

Low-Frequency Noise Spectroscopy for Navigating Geometrically Varying Strain Effects in HfO(2) Ferroelectric FETs

低频噪声谱技术在HfO(2)铁电场效应晶体管中几何变化应变效应的探测中的应用

期刊:Advanced Science
影响因子:14.1
doi:10.1002/advs.202501367
Koo, Ryun-Han; Shin, Wonjun; Kim, Sangwoo; Kim, Jangsaeng; Kwak, Been; Im, Jiseong; Kim, Hyunwoo; Kwon, Deok-Hwang; Cheema, Suraj S; Lee, Jong-Ho; Kwon, Daewoong
发表日期：2025
文献求助 收藏

CMOS-compatible flash-gated thyristor-based neuromorphic module with small area and low energy consumption for in-memory computing

用于内存计算的CMOS兼容型基于闪存门控晶闸管的神经形态模块，具有面积小、能耗低的特点。

期刊:Science Advances
影响因子:12.5
doi:10.1126/sciadv.adt8227
Ko, Jonghyun; Im, Jiseong; Kim, Jangsaeng; Shin, Wonjun; Koo, Ryun-Han; Park, Sung-Ho; Woo, Sung Yun; Lee, Jong-Ho
发表日期：2025
文献求助 收藏

A New Back-End-Of-Line Ferroelectric Field-Effect Transistor Platform via Laser Processing

一种基于激光加工的新型后端铁电场效应晶体管平台

期刊:Small
影响因子:12.1
doi:10.1002/smll.202406376
Kim, Sang Woo; Shin, Wonjun; Koo, Ryun-Han; Kim, Jangsaeng; Im, Jiseong; Koh, Dooyong; Lee, Jong-Ho; Cheema, Suraj S; Kwon, Daewoong
发表日期：2025
文献求助 收藏

Physical correlation between stochasticity and process-induced damage in ferroelectric memory devices

铁电存储器件中随机性和工艺诱导损伤之间的物理关联

期刊:Nano Convergence
影响因子:11
doi:10.1186/s40580-025-00505-1
Koo, Ryun-Han; Kim, Seungwhan; Im, Jiseong; Ryu, Sangwoo; Choi, Kangwook; Park, Sung-Ho; Ko, Jonghyun; Ji, Jongho; Oh, Mingyun; Kim, Jangsaeng; Jung, Gyuweon; Lee, Sung-Tae; Kwon, Daewoong; Shin, Wonjun; Lee, Jong-Ho
发表日期：2025
文献求助 收藏

Unraveling ionic switching dynamics in high-k dielectric double-gate transistors via low-frequency noise spectroscopy

利用低频噪声谱揭示高介电常数双栅晶体管中的离子开关动力学

期刊:Nano Convergence
影响因子:11
doi:10.1186/s40580-025-00512-2
Jeong, Soi; Han, Chang-Hyeon; Kwak, Been; Koo, Ryun-Han; Cho, Youngchan; Kim, Jangsaeng; Lee, Jong-Ho; Kwon, Daewoong; Shin, Wonjun
发表日期：2025
文献求助 收藏

Analog reservoir computing via ferroelectric mixed phase boundary transistors

基于铁电混合相边界晶体管的模拟储层计算

期刊:Nature Communications
影响因子:15.7
doi:10.1038/s41467-024-53321-2
Kim, Jangsaeng; Park, Eun Chan; Shin, Wonjun; Koo, Ryun-Han; Han, Chang-Hyeon; Kang, He Young; Yang, Tae Gyu; Goh, Youngin; Lee, Kilho; Ha, Daewon; Cheema, Suraj S; Jeong, Jae Kyeong; Kwon, Daewoong
发表日期：2024
文献求助 收藏