日期 影响因子
日期:
2020 年 — 2026 年
2020
2021
2022
2023
2024
2025
2026
影响因子:
–

Surface modification of XSe (X = Cu and Ag) monolayers by grope 1 elements: A metal to semiconductor transition by a first-principles perspective

利用第一类元素对XSe（X = Cu和Ag）单层进行表面改性：基于第一性原理的金属到半导体转变

期刊:Scientific Reports
影响因子:3.9
doi:10.1038/s41598-024-63580-0
Bafekry, A; Faraji, M; Khan, S Hasan; Fadlallah, M M; Jappor, H R; Shokri, B; Ghergherehchi, M; Chang, Gap Soo
发表日期：2024
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Semiconducting Chalcogenide Alloys Based on the (Ge, Sn, Pb) (S, Se, Te) Formula with Outstanding Properties: A First-Principles Calculation Study

基于(Ge, Sn, Pb)(S, Se, Te)公式的半导体硫族化物合金具有优异的性能：第一性原理计算研究

期刊:ACS Omega
影响因子:4.3
doi:10.1021/acsomega.0c06024
Bafekry, Asadollah; Shahrokhi, Masoud; Shafique, Aamir; Jappor, Hamad R; Fadlallah, Mohamed M; Stampfl, Catherine; Ghergherehchi, Mitra; Mushtaq, Muhammad; Feghhi, Seyed Amir Hossein; Gogova, Daniela
发表日期：2021
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Ab initio prediction of semiconductivity in a novel two-dimensional Sb(2)X(3) (X= S, Se, Te) monolayers with orthorhombic structure

利用第一性原理预测新型二维Sb₂X₃（X=S、Se、Te）单层正交晶系材料的半导体特性

期刊:Scientific Reports
影响因子:3.9
doi:10.1038/s41598-021-89944-4
Bafekry, A; Mortazavi, B; Faraji, M; Shahrokhi, M; Shafique, A; Jappor, H R; Nguyen, C; Ghergherehchi, M; Feghhi, S A H
发表日期：2021
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