High-density 2D hole gas in p-GaN/AlN/AlGaN on a silicon substrate with polarization-enhanced Mg ionization
在硅衬底上,p-GaN/AlN/AlGaN中具有极化增强Mg电离的高密度二维空穴气
期刊:Fundamental Research
影响因子:6.3
doi:10.1016/j.fmre.2023.07.002
Zhang, Tao; Su, Huake; Zhu, Jiaduo; Du, Hanghai; Ning, Jing; Lv, Yueguang; Xu, Shengrui; Zhang, Jincheng; Hao, Yue