Zirconium-Rich Strategy in Ultrathin Hf(0.5)Zr(0.5)O(2) toward Back-End-of-Line-Compatible Ferroelectric Random Access Memory
超薄Hf(0.5)Zr(0.5)O(2)中富锆策略及其在后端兼容铁电随机存取存储器中的应用
期刊:Advanced Science
影响因子:14.1
doi:10.1002/advs.202509384
Liu, Yinchi; Tao, Jiajia; Dou, Xiaoyu; Xu, Kangli; Li, Yuchun; Zhu, Handong; Lu, Hongliang; Li, Yanxi; Liu, Chi; Chen, Jiezhi; Chen, Lin; Ding, Shijin; Wu, Jixuan; Liu, Wenjun
