High-density vertical sidewall MoS(2) transistors through T-shape vertical lamination
通过T形垂直层压技术制备高密度垂直侧壁MoS(2)晶体管
期刊:Nature Communications
影响因子:15.7
doi:10.1038/s41467-024-50185-4
Tao, Quanyang; Wu, Ruixia; Zou, Xuming; Chen, Yang; Li, Wanying; Lu, Zheyi; Ma, Likuan; Kong, Lingan; Lu, Donglin; Yang, Xiaokun; Song, Wenjing; Li, Wei; Liu, Liting; Ding, Shuimei; Liu, Xiao; Duan, Xidong; Liao, Lei; Liu, Yuan