Local p- and n-Type Doping of an Oxide Semiconductor via Electric-Field-Driven Defect Migration
利用电场驱动缺陷迁移实现氧化物半导体的局部p型和n型掺杂
期刊:Advanced Science
影响因子:14.1
doi:10.1002/advs.202506629
He, Jiali; Ludacka, Ursula; Hunnestad, Kasper A; Småbråten, Didrik R; Shapovalov, Konstantin; Vullum, Per Erik; Hatzoglou, Constantinos; Evans, Donald M; Roede, Erik D; Yan, Zewu; Bourret, Edith; Selbach, Sverre M; Gao, David; Akola, Jaakko; Meier, Dennis