Low-Resistance, High-Yield Electrical Contacts to Atom Scale Si:P Devices Using Palladium Silicide
利用硅化钯实现原子级Si:P器件的低电阻、高良率电接触
期刊:Physical Review Applied
影响因子:4.4
doi:10.1103/PhysRevApplied.11.034071
Schmucker, Scott W; Namboodiri, Pradeep N; Kashid, Ranjit; Wang, Xiqiao; Hu, Binhui; Wyrick, Jonathan E; Myers, Alline F; Schumacher, Joshua D; Silver, Richard M; Stewart, M D Jr