Characterization of epitaxial GaAs MOS capacitors using atomic layer-deposited TiO2/Al2O3 gate stack: study of Ge auto-doping and p-type Zn doping
利用原子层沉积TiO2/Al2O3栅堆叠结构表征外延GaAs MOS电容器：研究Ge自掺杂和p型Zn掺杂
期刊:Nanoscale Research Letters
影响因子:
doi:10.1186/1556-276X-7-99
Dalapati, Goutam Kumar; Shun Wong, Terence Kin; Li, Yang; Chia, Ching Kean; Das, Anindita; Mahata, Chandreswar; Gao, Han; Chattopadhyay, Sanatan; Kumar, Manippady Krishna; Seng, Hwee Leng; Maiti, Chinmay Kumar; Chi, Dong Zhi
