1.3 kV Vertical GaN-Based Trench MOSFETs on 4-Inch Free Standing GaN Wafer
基于4英寸独立式GaN晶圆的1.3 kV垂直GaN基沟槽MOSFET
期刊:Nanoscale Research Letters
影响因子:
doi:10.1186/s11671-022-03653-z
He, Wei; Li, Jian; Liao, Zeliang; Lin, Feng; Wu, Junye; Wang, Bing; Wang, Maojun; Liu, Nan; Chiu, Hsien-Chin; Kuo, Hao-Chung; Lin, Xinnan; Li, Jingbo; Liu, Xinke