日期:
2020 年 — 2026 年
2020
2021
2022
2023
2024
2025
2026
影响因子:

Expression Analysis of Oxidative Stress Markers 8-hydroxydeoxyguanosine and Protein Carbonyl in Breast Cancer and Their associations with Certain Immunological and Tumor Markers

乳腺癌中氧化应激标志物8-羟基脱氧鸟苷和蛋白质羰基的表达分析及其与某些免疫学和肿瘤标志物的关系

Yahia, Saddek; Tahari, Zineb; Medjdoub, Asmahane; Bessaih, Nadia; Messatfa, Moussa; Raiah, Mourad; Ouldcadi, Houria; Saadi Ouslim, Amel Soulef; Seddiki, Sonia; Sahraoui, Tewfik

Antidiabetic potential of polysaccharides from Algerian Saharan Zygophyllum geslini in streptozotocin-induced diabetic rats

阿尔及利亚撒哈拉蒺藜多糖对链脲佐菌素诱导糖尿病大鼠的抗糖尿病潜力

Medjdoub, Houria; Bouali, Waffa; Azzi, Arezki; Belkacem, Nacéra; Benariba, Nabila; Meliani, Nawel

Impact of Chronic Stress and Anxiety on Interleukin-6, Hypoxia-Inducible Factor-1α and on Pathological and Immunohistochemical Parameters in Breast Cancer

慢性应激和焦虑对乳腺癌中白细胞介素-6、缺氧诱导因子-1α以及病理和免疫组织化学参数的影响

Yahia, Saddek; Tahari, Zineb; Medjdoub, Asmahame; Bessaih, Nadia; Messatfa, Moussa; Lahmer, Miloud; Seddiki, Sonia; Sahraoui, Tewfik

Understanding and Quantifying the Benefit of Graded Aluminum Gallium Nitride Channel High-Electron Mobility Transistors

理解和量化梯度铝镓氮化物沟道高电子迁移率晶体管的优势

Grandpierron, François; Carneiro, Elodie; Ben-Hammou, Lyes; Moon, Jeong-Sun; Medjdoub, Farid

Optimization of Non-Alloyed Backside Ohmic Contacts to N-Face GaN for Fully Vertical GaN-on-Silicon-Based Power Devices

优化非合金化背面欧姆接触与N面GaN的接触,以实现全垂直GaN-on-Silicon基功率器件

Hamdaoui, Youssef; Vandenbroucke, Sofie S T; Michler, Sondre; Ziouche, Katir; Minjauw, Matthias M; Detavernier, Christophe; Medjdoub, Farid

Low Trapping Effects and High Electron Confinement in Short AlN/GaN-On-SiC HEMTs by Means of a Thin AlGaN Back Barrier

利用薄AlGaN背势垒实现短AlN/GaN-On-SiC HEMT中的低陷阱效应和高电子限制

Harrouche, Kathia; Venkatachalam, Srisaran; Ben-Hammou, Lyes; Grandpierron, François; Okada, Etienne; Medjdoub, Farid

Low Buffer Trapping Effects above 1200 V in Normally off GaN-on-Silicon Field Effect Transistors

低缓冲层陷阱效应(高于 1200 V)在常关型硅基氮化镓场效应晶体管中

Abid, Idriss; Hamdaoui, Youssef; Mehta, Jash; Derluyn, Joff; Medjdoub, Farid

Editorial for the Special Issue on Wide Bandgap Based Devices: Design, Fabrication and Applications

宽带隙器件特刊:设计、制造和应用 社论

Medjdoub, Farid

Vertical Leakage in GaN-on-Si Stacks Investigated by a Buffer Decomposition Experiment

通过缓冲层分解实验研究GaN-on-Si叠层中的垂直泄漏

Tajalli, Alaleh; Borga, Matteo; Meneghini, Matteo; De Santi, Carlo; Benazzi, Davide; Besendörfer, Sven; Püsche, Roland; Derluyn, Joff; Degroote, Stefan; Germain, Marianne; Kabouche, Riad; Abid, Idriss; Meissner, Elke; Zanoni, Enrico; Medjdoub, Farid; Meneghesso, Gaudenzio

High Lateral Breakdown Voltage in Thin Channel AlGaN/GaN High Electron Mobility Transistors on AlN/Sapphire Templates

在AlN/蓝宝石衬底上制备的薄沟道AlGaN/GaN高电子迁移率晶体管具有高横向击穿电压

Abid, Idriss; Kabouche, Riad; Bougerol, Catherine; Pernot, Julien; Masante, Cedric; Comyn, Remi; Cordier, Yvon; Medjdoub, Farid