Electrical activity at the AlN/Si Interface: identifying the main origin of propagation losses in GaN-on-Si devices at microwave frequencies
AlN/Si 界面处的电活动:确定微波频率下 GaN-on-Si 器件中传播损耗的主要来源
期刊:Scientific Reports
影响因子:3.8
doi:10.1038/s41598-020-71064-0
Micka Bah, Damien Valente, Marie Lesecq, Nicolas Defrance, Maxime Garcia Barros, Jean-Claude De Jaeger, Eric Frayssinet, Rémi Comyn, Thi Huong Ngo, Daniel Alquier, Yvon Cordier