Very Low-Efficiency Droop in 293 nm AlGaN-Based Light-Emitting Diodes Featuring a Subtly Designed p-Type Layer
采用巧妙设计的p型层的293 nm AlGaN基发光二极管具有极低的效率下降
期刊:Molecules
影响因子:4.6
doi:10.3390/molecules27217596
Lai, Mu-Jen; Chang, Yi-Tsung; Wang, Shu-Chang; Huang, Shiang-Fu; Liu, Rui-Sen; Zhang, Xiong; Chen, Lung-Chien; Lin, Ray-Ming