日期:
2020 年 — 2026 年
2020
2021
2022
2023
2024
2025
2026
影响因子:

High performance and low leakage heterojunction 10 nm PZT NC-FinFET for low power application

用于低功耗应用的高性能、低漏电异质结10nm PZT NC-FinFET

Tripathi, Suman Lata; Prakash, Neeraj Nayan; Raj, Balwinder; Hadiyoso, Sugondo

Design and analysis of NC-FinFET using Pb(Zr(y)Ti(1-y))O(3) under high ionising radiations

在高电离辐射下,采用 Pb(Zr(y)Ti(1-y))O(3) 的 NC-FinFET 的设计与分析

Tripathi, Suman Lata; Prakash, Neeraj Nayan; Yadav, Ashutosh Kumar; Raj, Balwinder; Wijayanto, Inung