Formation of Ge-Sn nanodots on Si(100) surfaces by molecular beam epitaxy
利用分子束外延法在Si(100)表面形成Ge-Sn纳米点
期刊:Nanoscale Research Letters
影响因子:
doi:10.1186/1556-276X-6-85
Mashanov, Vladimir; Ulyanov, Vladimir; Timofeev, Vyacheslav; Nikiforov, Aleksandr; Pchelyakov, Oleg; Yu, Ing-Song; Cheng, Henry
