Low breakdown field and high ionization index in ReSe(2) avalanche field-effect transistors
ReSe(2)雪崩场效应晶体管具有低击穿场强和高电离指数
期刊:Nature Communications
影响因子:15.7
doi:10.1038/s41467-026-69994-w
Zhang, Jiaona; Wang, Jinyong; Liu, Dexing; Andreev, Maksim; Peng, Zhirong; Wei, Jinchen; Bozcali, Ahmet Enes; Jain, Samarth; Zheng, Haofei; Avsar, Ahmet; Zhang, Min; Chan, Mansun; Ang, Kah-Wee