日期 影响因子
日期:
2020 年 — 2026 年
2020
2021
2022
2023
2024
2025
2026
影响因子:
–

Enabling Radiation Hardness in Solid-State NAND Storage Utilizing a Laminated Ferroelectric Stack

利用层叠铁电堆实现固态NAND存储器的抗辐射能力

期刊:Nano Letters
影响因子:9.1
doi:10.1021/acs.nanolett.5c05947
Fernandes, Lance; Wodzro, Stuart; Venkatesan, Prasanna; Ravikumar, Priyankka; Lee, Ming-Yen; Shon, Minji; Chakraborty, Dyutimoy; Song, Taeyoung; Kang, Sanghyun; Soliman, Salma; Tian, Mengkun; Yeager, Jason; Adler, Jackson; Chen, Jiayi; Wang, Zekai; Wolfe, Douglas; Yu, Shimeng; Padovani, Andrea; Datta, Suman; Ray, Biswajit; Khan, Asif
发表日期：2026
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ALD-Derived WO(3-x) Leads to Nearly Wake-Up-Free Ferroelectric Hf(0.5)Zr(0.5)O(2) at Elevated Temperatures

ALD法制备的WO(3-x)在高温下可转化为近乎无唤醒效应的铁电体Hf(0.5)Zr(0.5)O(2)

期刊:ACS Applied Electronic Materials
影响因子:4.7
doi:10.1021/acsaelm.5c02359
Afroze, Nashrah; Choi, Jihoon; Soliman, Salma; Kim, Chang Hoon; Chen, Jiayi; Kuo, Yu-Hsin; Tian, Mengkun; Zhang, Chengyang; Gundlapudi Ravikumar, Priyankka; Datta, Suman; Padovani, Andrea; Lee, Jun Hee; Khan, Asif
发表日期：2026
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