Crystal orientation dictated epitaxy of ultrawide-bandgap 5.4- to 8.6-eV α-(AlGa)(2)O(3) on m-plane sapphire
晶体取向决定了超宽带隙（5.4~8.6 eV）α-(AlGa)2O(3)在m面蓝宝石上的外延生长
期刊:Science Advances
影响因子:12.5
doi:10.1126/sciadv.abd5891
Jinno, Riena; Chang, Celesta S; Onuma, Takeyoshi; Cho, Yongjin; Ho, Shao-Ting; Rowe, Derek; Cao, Michael C; Lee, Kevin; Protasenko, Vladimir; Schlom, Darrell G; Muller, David A; Xing, Huili G; Jena, Debdeep
