日期:
2020 年 — 2026 年
2020
2021
2022
2023
2024
2025
2026
影响因子:

Enabling Robust N-Type Perovskite Field-Effect Transistors Through an TiO(2) Interlayer Strategy

通过TiO₂中间层策略实现稳健的N型钙钛矿场效应晶体管

Xia, Jiangnan; Qiu, Xincan; Chen, Ping-An; Liu, Yu; Ding, Jiaqi; Zhang, Yu; Wei, Huan; Gong, Zhenqi; Peng, Chengyuan; Shi, Wenpei; Wang, Shuanglong; Chen, Chen; Hu, Yuanyuan

Protocol for doping of an Sn-based two-dimensional perovskite semiconductor by incorporating SnI(4) for field-effect transistors and thermoelectric devices.

通过掺入 SnI(4) 对 Sn 基二维钙钛矿半导体进行掺杂,用于场效应晶体管和热电器件的方案

Liu Yu, Chen Ping-An, Qiu Xincan, Guo Jing, Xia Jiangnan, Wei Huan, Xie Haihong, Hou Shijin, He Mai, Wang Xiao, Zeng Zebing, Jiang Lang, Liao Lei, Hu Yuanyuan