日期 影响因子
日期:
2020 年 — 2026 年
2020
2021
2022
2023
2024
2025
2026
影响因子:
–

Low-Defect Bulk-Germanium-on-Insulator Photodetectors with Resonant Cavity Enhancement at 1550 nm for High-Resolution SWIR Imaging

用于高分辨率短波红外成像的1550 nm谐振腔增强低缺陷绝缘体上锗光电探测器

期刊:Nanomaterials
影响因子:4.3
doi:10.3390/nano16050316
Su, Jiale; Li, Ben; Ren, Yuhui; Du, Junhao; Duan, Xiangliang; Dong, Tianyu; Su, Xueyin; Ye, Tianchun; Zhao, Xuewei; Miao, Yuanhao; Radamson, Henry H
发表日期：2026
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Optimization of Strain and Doping in Ge/GeSi Nanoscale Multilayers for GOI Short-Wave Infrared Imaging Applications

优化Ge/GeSi纳米多层膜的应变和掺杂以用于GOI短波红外成像应用

期刊:Nanomaterials
影响因子:4.3
doi:10.3390/nano16050295
Zhao, Xuewei; Miao, Yuanhao; Su, Jiale; Du, Junhao; Ren, Yuhui; Li, Ben; Dong, Tianyu; Duan, Xiangliang; Su, Xueyin; Radamson, Henry H
发表日期：2026
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Convergence of Thermistor Materials and Focal Plane Arrays in Uncooled Microbolometers: Trends and Perspectives

非制冷微测辐射热计中热敏电阻材料与焦平面阵列的融合：趋势与展望

期刊:Nanomaterials
影响因子:4.3
doi:10.3390/nano15171316
Wang, Bo; Zhao, Xuewei; Dong, Tianyu; Li, Ben; Zhang, Fan; Su, Jiale; Ren, Yuhui; Duan, Xiangliang; Lin, Hongxiao; Miao, Yuanhao; Radamson, Henry H
发表日期：2025
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Review of Short-Wavelength Infrared Flip-Chip Bump Bonding Process Technology

短波红外倒装芯片凸点键合工艺技术综述

期刊:Sensors
影响因子:3.5
doi:10.3390/s25010263
Du, Junhao; Zhao, Xuewei; Su, Jiale; Li, Ben; Duan, Xiangliang; Dong, Tianyu; Lin, Hongxiao; Ren, Yuhui; Miao, Yuanhao; Radamson, Henry H
发表日期：2025
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Review of Ge(GeSn) and InGaAs Avalanche Diodes Operating in the SWIR Spectral Region

对工作在短波红外光谱区域的Ge(GeSn)和InGaAs雪崩二极管的综述

期刊:Nanomaterials
影响因子:4.3
doi:10.3390/nano13030606
Miao, Yuanhao; Lin, Hongxiao; Li, Ben; Dong, Tianyu; He, Chuangqi; Du, Junhao; Zhao, Xuewei; Zhou, Ziwei; Su, Jiale; Wang, He; Dong, Yan; Lu, Bin; Dong, Linpeng; Radamson, Henry H
发表日期：2023
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Monolithic Integration of O-Band InAs Quantum Dot Lasers with Engineered GaAs Virtual Substrate Based on Silicon

基于硅的工程化GaAs虚拟衬底的O波段InAs量子点激光器的单片集成

期刊:Nanomaterials
影响因子:4.3
doi:10.3390/nano12152704
Xu, Buqing; Wang, Guilei; Du, Yong; Miao, Yuanhao; Li, Ben; Zhao, Xuewei; Lin, Hongxiao; Yu, Jiahan; Su, Jiale; Dong, Yan; Ye, Tianchun; Radamson, Henry H
发表日期：2022
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Special Issue: Silicon Nanodevices

特刊：硅纳米器件

期刊:Nanomaterials
影响因子:4.3
doi:10.3390/nano12121980
Radamson, Henry H; Wang, Guilei
发表日期：2022
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Reduced Dislocation of GaAs Layer Grown on Ge-Buffered Si (001) Substrate Using Dislocation Filter Layers for an O-Band InAs/GaAs Quantum Dot Narrow-Ridge Laser

利用位错过滤层降低生长在锗缓冲硅(001)衬底上的GaAs层的位错，用于O波段InAs/GaAs量子点窄脊激光器

期刊:Micromachines
影响因子:3
doi:10.3390/mi13101579
Du, Yong; Wei, Wenqi; Xu, Buqing; Wang, Guilei; Li, Ben; Miao, Yuanhao; Zhao, Xuewei; Kong, Zhenzhen; Lin, Hongxiao; Yu, Jiahan; Su, Jiale; Dong, Yan; Wang, Wenwu; Ye, Tianchun; Zhang, Jianjun; Radamson, Henry H
发表日期：2022
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Carbon-Related Materials: Graphene and Carbon Nanotubes in Semiconductor Applications and Design

碳相关材料：石墨烯和碳纳米管在半导体应用和设计中的应用

期刊:Micromachines
影响因子:3
doi:10.3390/mi13081257
Kolahdouz, Mohammadreza; Xu, Buqing; Nasiri, Aryanaz Faghih; Fathollahzadeh, Maryam; Manian, Mahmoud; Aghababa, Hossein; Wu, Yuanyuan; Radamson, Henry H
发表日期：2022
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Optimization of Structure and Electrical Characteristics for Four-Layer Vertically-Stacked Horizontal Gate-All-Around Si Nanosheets Devices

四层垂直堆叠水平环栅硅纳米片器件的结构和电学特性优化

期刊:Nanomaterials
影响因子:4.3
doi:10.3390/nano11030646
Zhang, Qingzhu; Gu, Jie; Xu, Renren; Cao, Lei; Li, Junjie; Wu, Zhenhua; Wang, Guilei; Yao, Jiaxin; Zhang, Zhaohao; Xiang, Jinjuan; He, Xiaobin; Kong, Zhenzhen; Yang, Hong; Tian, Jiajia; Xu, Gaobo; Mao, Shujuan; Radamson, Henry H; Yin, Huaxiang; Luo, Jun
发表日期：2021
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