InGaN micro-light-emitting diodes monolithically grown on Si: achieving ultra-stable operation through polarization and strain engineering
单片集成生长在硅衬底上的InGaN微型发光二极管：通过极化和应变工程实现超稳定运行
期刊:Light-Science & Applications
影响因子:23.4
doi:10.1038/s41377-022-00985-4
Wu, Yuanpeng; Xiao, Yixin; Navid, Ishtiaque; Sun, Kai; Malhotra, Yakshita; Wang, Ping; Wang, Ding; Xu, Yuanxiang; Pandey, Ayush; Reddeppa, Maddaka; Shin, Walter; Liu, Jiangnan; Min, Jungwook; Mi, Zetian
