Electrical property comparison and charge transmission in p-type double gate and single gate junctionless accumulation transistor fabricated by AFM nanolithography
采用原子力显微镜纳米光刻技术制备的p型双栅和单栅无结累积晶体管的电学性能比较和电荷传输特性
期刊:Nanoscale Research Letters
影响因子:
doi:10.1186/1556-276X-7-381
Dehzangi, Arash; Abdullah, A Makarimi; Larki, Farhad; Hutagalung, Sabar D; Saion, Elias B; Hamidon, Mohd N; Hassan, Jumiah; Gharayebi, Yadollah