Electronic structures and unusually robust bandgap in an ultrahigh-mobility layered oxide semiconductor, Bi(2)O(2)Se
超高迁移率层状氧化物半导体Bi(2)O(2)Se的电子结构和异常稳定的带隙
期刊:Science Advances
影响因子:12.5
doi:10.1126/sciadv.aat8355
Chen, Cheng; Wang, Meixiao; Wu, Jinxiong; Fu, Huixia; Yang, Haifeng; Tian, Zhen; Tu, Teng; Peng, Han; Sun, Yan; Xu, Xiang; Jiang, Juan; Schröter, Niels B M; Li, Yiwei; Pei, Ding; Liu, Shuai; Ekahana, Sandy A; Yuan, Hongtao; Xue, Jiamin; Li, Gang; Jia, Jinfeng; Liu, Zhongkai; Yan, Binghai; Peng, Hailin; Chen, Yulin