日期:
2020 年 — 2026 年
2020
2021
2022
2023
2024
2025
2026
影响因子:

Molecular Order Induced Charge Transfer in a C(60)-Topological Insulator Moiré Heterostructure

C(60)拓扑绝缘体莫尔异质结构中的分子有序诱导电荷转移

Pandeya, Ram Prakash; Shchukin, Konstantin P; Falke, Yannic; Mussler, Gregor; Jalil, Abdur Rehman; Atodiresei, Nicolae; Hasdeo, Eddwi H; Fedorov, Alexander; Senkovskiy, Boris V; Jansen, Daniel; Di Santo, Giovanni; Petaccia, Luca; Grüneis, Alexander

Tunneling current modulation in atomically precise graphene nanoribbon heterojunctions

原子级精确石墨烯纳米带异质结中的隧道电流调制

Senkovskiy, Boris V; Nenashev, Alexey V; Alavi, Seyed K; Falke, Yannic; Hell, Martin; Bampoulis, Pantelis; Rybkovskiy, Dmitry V; Usachov, Dmitry Yu; Fedorov, Alexander V; Chernov, Alexander I; Gebhard, Florian; Meerholz, Klaus; Hertel, Dirk; Arita, Masashi; Okuda, Taichi; Miyamoto, Koji; Shimada, Kenya; Fischer, Felix R; Michely, Thomas; Baranovskii, Sergei D; Lindfors, Klas; Szkopek, Thomas; Grüneis, Alexander

Massive and massless charge carriers in an epitaxially strained alkali metal quantum well on graphene

石墨烯上外延应变碱金属量子阱中的大质量和无质量载流子

Hell, Martin; Ehlen, Niels; Marini, Giovanni; Falke, Yannic; Senkovskiy, Boris V; Herbig, Charlotte; Teichert, Christian; Jolie, Wouter; Michely, Thomas; Avila, Jose; Santo, Giovanni Di; Torre, Diego M de la; Petaccia, Luca; Profeta, Gianni; Grüneis, Alexander

Field-Effect Transistors Based on Networks of Highly Aligned, Chemically Synthesized N = 7 Armchair Graphene Nanoribbons

基于高度取向的化学合成N=7扶手椅型石墨烯纳米带网络的场效应晶体管

Passi, Vikram; Gahoi, Amit; Senkovskiy, Boris V; Haberer, Danny; Fischer, Felix R; Grüneis, Alexander; Lemme, Max C

One-step chemical vapor deposition synthesis and supercapacitor performance of nitrogen-doped porous carbon-carbon nanotube hybrids

一步化学气相沉积法合成氮掺杂多孔碳-碳纳米管杂化材料及其超级电容器性能

Lobiak, Egor V; Bulusheva, Lyubov G; Fedorovskaya, Ekaterina O; Shubin, Yury V; Plyusnin, Pavel E; Lonchambon, Pierre; Senkovskiy, Boris V; Ismagilov, Zinfer R; Flahaut, Emmanuel; Okotrub, Alexander V

Structural and electronic properties of epitaxial multilayer h-BN on Ni(111) for spintronics applications

用于自旋电子学应用的Ni(111)上外延多层h-BN的结构和电子特性

Tonkikh, A A; Voloshina, E N; Werner, P; Blumtritt, H; Senkovskiy, B; Güntherodt, G; Parkin, S S P; Dedkov, Yu S

Atomically precise semiconductor--graphene and hBN interfaces by Ge intercalation

通过锗插层实现原子级精确的半导体-石墨烯和六方氮化硼界面

Verbitskiy, N I; Fedorov, A V; Profeta, G; Stroppa, A; Petaccia, L; Senkovskiy, B; Nefedov, A; Wöll, C; Usachov, D Yu; Vyalikh, D V; Yashina, L V; Eliseev, A A; Pichler, T; Grüneis, A