日期 影响因子
日期:
2020 年 — 2026 年
2020
2021
2022
2023
2024
2025
2026
影响因子:
–

Reactive Machine Learning Interatomic Potentials for Chemistry and Materials Science

用于化学和材料科学的反应式机器学习原子间势

期刊:Chemical Reviews
影响因子:55.8
doi:10.1021/acs.chemrev.5c00728
Kim, Jisu; Cho, Hyunsung; Jeon, Haekwan; Jung, Jisu; Han, Seungwu
发表日期：2026
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Optimizing cross-domain transfer for universal machine learning interatomic potentials

优化跨域迁移以实现通用机器学习原子间势

期刊:Nature Communications
影响因子:15.7
doi:10.1038/s41467-026-70195-8
Kim, Jaesun; You, Jinmu; Park, Yutack; Lim, Yunsung; Kang, Yujin; Kim, Jisu; Jeon, Haekwan; Ju, Suyeon; Hong, Deokgi; Lee, Seung Yul; Choi, Saerom; Kim, Yongdeok; Lee, Jae W; Han, Seungwu
发表日期：2026
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Investigation of the mechanism of the anomalous Hall effects in Cr(2)Te(3)/(BiSb)(2)(TeSe)(3) heterostructure

对Cr(2)Te(3)/(BiSb)2(TeSe)3异质结构中异常霍尔效应机理的研究

期刊:Nano Convergence
影响因子:11
doi:10.1186/s40580-022-00348-0
Cho, Seong Won; Lee, In Hak; Lee, Youngwoong; Kim, Sangheon; Khim, Yeong Gwang; Park, Seung-Young; Jo, Younghun; Choi, Junwoo; Han, Seungwu; Chang, Young Jun; Lee, Suyoun
发表日期：2023
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Correction: Investigation of the mechanism of the anomalous Hall effects in Cr(2)Te(3)/(BiSb)(2)(TeSe)(3) heterostructure

更正：对Cr(2)Te(3)/(BiSb)2(TeSe)3异质结构中异常霍尔效应机理的研究

期刊:Nano Convergence
影响因子:11
doi:10.1186/s40580-023-00360-y
Cho, Seong Won; Lee, In Hak; Lee, Youngwoong; Kim, Sangheon; Khim, Yeong Gwang; Park, Seung-Young; Jo, Younghun; Choi, Junwoo; Han, Seungwu; Chang, Young Jun; Lee, Suyoun
发表日期：2023
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First-Principles Calculations of Luminescence Spectra of Real-Scale Quantum Dots

基于第一性原理的真实尺度量子点发光光谱计算

期刊:ACS Materials Au
影响因子:6.5
doi:10.1021/acsmaterialsau.1c00034
Kang, Sungwoo; Han, Seungwu; Kang, Youngho
发表日期：2022
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A band-gap database for semiconducting inorganic materials calculated with hybrid functional

利用混合泛函计算得到的半导体无机材料带隙数据库

期刊:Scientific Data
影响因子:6.9
doi:10.1038/s41597-020-00723-8
Kim, Sangtae; Lee, Miso; Hong, Changho; Yoon, Youngchae; An, Hyungmin; Lee, Dongheon; Jeong, Wonseok; Yoo, Dongsun; Kang, Youngho; Youn, Yong; Han, Seungwu
发表日期：2020
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High-throughput ab initio calculations on dielectric constant and band gap of non-oxide dielectrics

非氧化物介质介电常数和带隙的高通量从头计算

期刊:Scientific Reports
影响因子:3.9
doi:10.1038/s41598-018-33095-6
Lee, Miso; Youn, Yong; Yim, Kanghoon; Han, Seungwu
发表日期：2018
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Origin of degradation phenomenon under drain bias stress for oxide thin film transistors using IGZO and IGO channel layers

采用IGZO和IGO沟道层的氧化物薄膜晶体管在漏极偏置应力下退化现象的成因

期刊:Scientific Reports
影响因子:3.9
doi:10.1038/srep07884
Bak, Jun Yong; Kang, Youngho; Yang, Shinhyuk; Ryu, Ho-Jun; Hwang, Chi-Sun; Han, Seungwu; Yoon, Sung-Min
发表日期：2015
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