Siddheswar相关文献与解析，生知库 | 链接生命科学的每一步

Das, Apu; Senapati, Asim; Kumar, Gautham; Lou, Zhao-Feng; Müller, Jonas; Maskeen, Jaskirat Singh; Chang, Yii-Tay; Tewari, Mohit; Agarwal, Ankit; Paul, Agniva; Raffel, Yannick; Maikap, Siddheswar; Kao, Kuo-Hsing; Agarwal, Tarun; Lashkare, Sandip; Lu, Darsen; Larrieu, Guilhem; Lee, Min-Hung; De, Sourav

发表日期：2026

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Symmetry-Guided Functional Pathways of Intercalation-Free Rhombohedral (R3) Hafnia Derived from the Fluorite Phase for Low-Coercive Ferroelectric Memory

对称性引导的无插层菱面体(R3)氧化铪功能路径：源自萤石相的低矫顽力铁电记忆

期刊:ACS Applied Materials & Interfaces

影响因子:8.2

doi:10.1021/acsami.5c23427

Januar, Mochamad; Liu, Cheng-Hong; Aich, Abhijit; Lee, Jia-Yang; Maikap, Siddheswar; Lee, Min-Hung

发表日期：2026

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Controlling Cu Migration on Resistive Switching, Artificial Synapse, and Glucose/Saliva Detection by Using an Optimized AlO (x) Interfacial Layer in a-CO (x) -Based Conductive Bridge Random Access Memory

通过在基于a-CO(x)的导电桥随机存取存储器中使用优化的AlO(x)界面层来控制电阻开关、人工突触和葡萄糖/唾液检测中的Cu迁移

期刊:ACS Omega

影响因子:4.3

doi:10.1021/acsomega.0c00795

Ginnaram, Sreekanth; Qiu, Jiantai Timothy; Maikap, Siddheswar

神经科学

发表日期：2020

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Understanding of multi-level resistive switching mechanism in GeO(x) through redox reaction in H(2)O(2)/sarcosine prostate cancer biomarker detection

通过H₂O₂/肌氨酸氧化还原反应理解GeOₓ中的多级电阻开关机制，并用于前列腺癌生物标志物检测

期刊:Scientific Reports

影响因子:3.9

doi:10.1038/s41598-017-11657-4

Samanta, Subhranu; Rahaman, Sheikh Ziaur; Roy, Anisha; Jana, Surajit; Chakrabarti, Somsubhra; Panja, Rajeswar; Roy, Sourav; Dutta, Mrinmoy; Ginnaram, Sreekanth; Prakash, Amit; Maikap, Siddheswar; Cheng, Hsin-Ming; Tsai, Ling-Na; Qiu, Jian-Tai; Ray, Samit K

Temperature-Dependent Non-linear Resistive Switching Characteristics and Mechanism Using a New W/WO3/WOx/W Structure

利用新型W/WO3/WOx/W结构研究温度相关的非线性电阻开关特性及机制

期刊:Nanoscale Research Letters

影响因子:

doi:10.1186/s11671-016-1602-7

Chakrabarti, Somsubhra; Samanta, Subhranu; Maikap, Siddheswar; Rahaman, Sheikh Ziaur; Cheng, Hsin-Ming

发表日期：2016

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Detection of pH and Enzyme-Free H2O2 Sensing Mechanism by Using GdO x Membrane in Electrolyte-Insulator-Semiconductor Structure

利用电解质-绝缘体-半导体结构中的GdO x 膜进行pH检测和无酶H2O2传感机制

期刊:Nanoscale Research Letters

影响因子:

doi:10.1186/s11671-016-1657-5

Kumar, Pankaj; Maikap, Siddheswar; Qiu, Jian-Tai; Jana, Surajit; Roy, Anisha; Singh, Kanishk; Cheng, Hsin-Ming; Chang, Mu-Tung; Mahapatra, Rajat; Chiu, Hsien-Chin; Yang, Jer-Ren

发表日期：2016

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Observation of Resistive Switching Memory by Reducing Device Size in a New Cr/CrO (x) /TiO (x) /TiN Structure

通过减小器件尺寸，在新型Cr/CrO(x)/TiO(x)/TiN结构中观察到阻变存储器特性

期刊:Nano-Micro Letters

影响因子:36.3

doi:10.1007/s40820-015-0055-3

Jana, Debanjan; Samanta, Subhranu; Roy, Sourav; Lin, Yu Feng; Maikap, Siddheswar

发表日期：2015

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Resistive and New Optical Switching Memory Characteristics Using Thermally Grown Ge0.2Se0.8 Film in Cu/GeSex/W Structure

采用热生长Ge0.2Se0.8薄膜的Cu/GeSex/W结构中的电阻式和新型光开关存储器特性

期刊:Nanoscale Research Letters

影响因子:

doi:10.1186/s11671-015-1090-1

Jana, Debanjan; Chakrabarti, Somsubhra; Rahaman, Sheikh Ziaur; Maikap, Siddheswar

发表日期：2015

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Conductive-bridging random access memory: challenges and opportunity for 3D architecture

导电桥接随机存取存储器：3D架构的挑战与机遇

期刊:Nanoscale Research Letters

影响因子:

doi:10.1186/s11671-015-0880-9

Jana, Debanjan; Roy, Sourav; Panja, Rajeswar; Dutta, Mrinmoy; Rahaman, Sheikh Ziaur; Mahapatra, Rajat; Maikap, Siddheswar

3D/类器官

发表日期：2015

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RRAM characteristics using a new Cr/GdOx/TiN structure

采用新型Cr/GdOx/TiN结构的RRAM特性

期刊:Nanoscale Research Letters

影响因子:

doi:10.1186/1556-276X-9-680

Jana, Debanjan; Dutta, Mrinmoy; Samanta, Subhranu; Maikap, Siddheswar

发表日期：2014

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Sub-2 nm Equivalent-Oxide-Thickness Ferroelectric Transistors for Cryogenic Memory and Computing

用于低温存储和计算的亚2纳米等效氧化层厚度铁电晶体管

Symmetry-Guided Functional Pathways of Intercalation-Free Rhombohedral (R3) Hafnia Derived from the Fluorite Phase for Low-Coercive Ferroelectric Memory

对称性引导的无插层菱面体(R3)氧化铪功能路径：源自萤石相的低矫顽力铁电记忆

Controlling Cu Migration on Resistive Switching, Artificial Synapse, and Glucose/Saliva Detection by Using an Optimized AlO (x) Interfacial Layer in a-CO (x) -Based Conductive Bridge Random Access Memory

通过在基于a-CO(x)的导电桥随机存取存储器中使用优化的AlO(x)界面层来控制电阻开关、人工突触和葡萄糖/唾液检测中的Cu迁移

Understanding of multi-level resistive switching mechanism in GeO(x) through redox reaction in H(2)O(2)/sarcosine prostate cancer biomarker detection

通过H₂O₂/肌氨酸氧化还原反应理解GeOₓ中的多级电阻开关机制，并用于前列腺癌生物标志物检测

Temperature-Dependent Non-linear Resistive Switching Characteristics and Mechanism Using a New W/WO3/WOx/W Structure

利用新型W/WO3/WOx/W结构研究温度相关的非线性电阻开关特性及机制

Detection of pH and Enzyme-Free H2O2 Sensing Mechanism by Using GdO x Membrane in Electrolyte-Insulator-Semiconductor Structure

利用电解质-绝缘体-半导体结构中的GdO x 膜进行pH检测和无酶H2O2传感机制

Observation of Resistive Switching Memory by Reducing Device Size in a New Cr/CrO (x) /TiO (x) /TiN Structure

通过减小器件尺寸，在新型Cr/CrO(x)/TiO(x)/TiN结构中观察到阻变存储器特性

Resistive and New Optical Switching Memory Characteristics Using Thermally Grown Ge0.2Se0.8 Film in Cu/GeSex/W Structure

采用热生长Ge0.2Se0.8薄膜的Cu/GeSex/W结构中的电阻式和新型光开关存储器特性

Conductive-bridging random access memory: challenges and opportunity for 3D architecture

导电桥接随机存取存储器：3D架构的挑战与机遇

RRAM characteristics using a new Cr/GdOx/TiN structure

采用新型Cr/GdOx/TiN结构的RRAM特性