Metal-Modulated Growth of Cubic, Red-Emitting InGaN Layers and Self-Assembled InGaN/GaN Quantum Wells by Molecular Beam Epitaxy
利用分子束外延法实现立方相红色发光InGaN层和自组装InGaN/GaN量子阱的金属调控生长
期刊:ACS Applied Electronic Materials
影响因子:4.7
doi:10.1021/acsaelm.4c02174
Jentsch, Silas A; Zscherp, Mario F; Lider, Vitalii; Winkler, Fabian; Beyer, Andreas; Belz, Jürgen; Gimbel, Nicolai M; Stein, Markus; As, Donat J; Henss, Anja; Volz, Kerstin; Chatterjee, Sangam; Schörmann, Jörg