日期:
2020 年 — 2026 年
2020
2021
2022
2023
2024
2025
2026
影响因子:

Mesoscopic Interference of Rotated Spins in Graphene Coupled to High-Spin-Orbit-Coupling Substrates

石墨烯中旋转自旋的介观干涉及其与高自旋轨道耦合衬底的耦合

Yokoi, Kazushi; Somphonsane, Ratchanok; Ramamoorthy, Harihara; Arabchigavkani, Nargess; He, Keke; Barut, Bilal; Yin, Shenchu; Randle, Michael D; Dixit, Ripudaman; Nathawat, Jubin; Fransson, Jonas; Kim, Gil-Ho; Watanabe, Kenji; Taniguchi, Takashi; Bird, Jonathan P; Aoki, Nobuyuki

Signatures of hot carriers and hot phonons in the re-entrant metallic and semiconducting states of Moiré-gapped graphene

莫尔能隙石墨烯重入金属态和半导体态中热载流子和热声子的特征

Nathawat, Jubin; Mansaray, Ishiaka; Sakanashi, Kohei; Wada, Naoto; Randle, Michael D; Yin, Shenchu; He, Keke; Arabchigavkani, Nargess; Dixit, Ripudaman; Barut, Bilal; Zhao, Miao; Ramamoorthy, Harihara; Somphonsane, Ratchanok; Kim, Gil-Ho; Watanabe, Kenji; Taniguchi, Takashi; Aoki, Nobuyuki; Han, Jong E; Bird, Jonathan P

CVD Synthesis of MoS(2) Using a Direct MoO(2) Precursor: A Study on the Effects of Growth Temperature on Precursor Diffusion and Morphology Evolutions

利用直接MoO(2)前驱体通过CVD合成MoS(2):生长温度对前驱体扩散和形貌演变的影响研究

Somphonsane, Ratchanok; Chiawchan, Tinna; Bootsa-Ard, Waraporn; Ramamoorthy, Harihara

CVD Synthesis of Intermediate State-Free, Large-Area and Continuous MoS(2) via Single-Step Vapor-Phase Sulfurization of MoO(2) Precursor

通过MoO(2)前驱体的单步气相硫化法CVD合成无中间态、大面积连续的MoS(2)

Chiawchan, Tinna; Ramamoorthy, Harihara; Buapan, Kanokwan; Somphonsane, Ratchanok

Negative Differential Conductance & Hot-Carrier Avalanching in Monolayer WS2 FETs

单层WS2场效应晶体管中的负微分电导和热载流子雪崩

He, G; Nathawat, J; Kwan, C-P; Ramamoorthy, H; Somphonsane, R; Zhao, M; Ghosh, K; Singisetti, U; Perea-López, N; Zhou, C; Elías, A L; Terrones, M; Gong, Y; Zhang, X; Vajtai, R; Ajayan, P M; Ferry, D K; Bird, J P