Estimating the quasi-Fermi level of holes at the surface of semiconductor photoanodes using outer-sphere redox couples
利用外层氧化还原对估算半导体光阳极表面空穴的准费米能级
期刊:Nature Communications
影响因子:15.7
doi:10.1038/s41467-025-58837-9
Shioiri, Yuu; Obata, Keisuke; Kawase, Yudai; Higashi, Tomohiro; Katayama, Masao; Schleuning, Markus; van de Krol, Roel; Friedrich, Dennis; Abdi, Fatwa Firdaus; Takanabe, Kazuhiro