Wafer-scale formation of MoS(2) with controlled thickness and high uniformity via conversion of MoO(x) using H(2)S sulfurization and subsequent crystallization
利用H₂S硫化和后续结晶技术，通过MoOₓ转化制备晶圆级厚度可控、均匀性高的MoS₂。
期刊:Scientific Reports
影响因子:3.9
doi:10.1038/s41598-026-38161-y
Okada, Naoya; Tanabe, Shinichi; Miura, Hitoshi; Cheng, Hao; Huang, Yumin; Warashina, Hisashi; Fukazawa, Atsuki; Maehara, Hiroki; Irisawa, Toshifumi
