Electronic Structure and Charge-Trapping Characteristics of the Al(2)O(3)-TiAlO-SiO(2) Gate Stack for Nonvolatile Memory Applications
用于非易失性存储器的 Al(2)O(3)-TiAlO-SiO(2) 栅堆叠的电子结构和电荷俘获特性
期刊:Nanoscale Research Letters
影响因子:
doi:10.1186/s11671-017-2040-x
Xu, Wenchao; Zhang, Yang; Tang, Zhenjie; Shao, Zhengjie; Zhou, Guofu; Qin, Minghui; Zeng, Min; Wu, Sujuan; Zhang, Zhang; Gao, Jinwei; Lu, Xubing; Liu, Junming