Molecular mechanisms of atomic layer etching of cobalt with sequential exposure to molecular chlorine and diketones
钴原子层蚀刻的分子机制及其与分子氯和二酮的顺序接触
期刊:Journal of Vacuum Science & Technology a
影响因子:2.1
doi:10.1116/1.5082187
Konh, Mahsa; He, Chuan; Lin, Xi; Guo, Xiangyu; Pallem, Venkateswara; Opila, Robert L; Teplyakov, Andrew V; Wang, Zijian; Yuan, Bo