Electrical isolation of dislocations in Ge layers on Si(001) substrates through CMOS-compatible suspended structures
通过CMOS兼容的悬浮结构实现Si(001)衬底上Ge层中位错的电隔离
期刊:Science and Technology of Advanced Materials
影响因子:6.9
doi:10.1088/1468-6996/13/5/055002
Shah, Vishal Ajit; Myronov, Maksym; Wongwanitwatana, Chalermwat; Bawden, Lewis; Prest, Martin J; Richardson-Bullock, James S; Rhead, Stephen; Parker, Evan H C; Whall, Terrance E; Leadley, David R
