Atomically precise semiconductor--graphene and hBN interfaces by Ge intercalation
通过锗插层实现原子级精确的半导体-石墨烯和六方氮化硼界面
期刊:Scientific Reports
影响因子:3.9
doi:10.1038/srep17700
Verbitskiy, N I; Fedorov, A V; Profeta, G; Stroppa, A; Petaccia, L; Senkovskiy, B; Nefedov, A; Wöll, C; Usachov, D Yu; Vyalikh, D V; Yashina, L V; Eliseev, A A; Pichler, T; Grüneis, A