日期:
2020 年 — 2026 年
2020
2021
2022
2023
2024
2025
2026
影响因子:

First-principles investigation of polytypic defects in InP

基于第一性原理的InP中多型缺陷研究

Vedel, Christian Dam; Smidstrup, Søren; Georgiev, Vihar P

Self-Consistent Enhanced S/D Tunneling Implementation in a 2D MS-EMC Nanodevice Simulator

二维MS-EMC纳米器件模拟器中的自洽增强型S/D隧穿实现

Medina-Bailon, Cristina; Padilla, José Luis; Sampedro, Carlos; Donetti, Luca; Gergiev, Vihar P; Gamiz, Francisco; Asenov, Asen

Simulation and Modeling of Novel Electronic Device Architectures with NESS (Nano-Electronic Simulation Software): A Modular Nano TCAD Simulation Framework

利用NESS(纳米电子仿真软件)对新型电子器件架构进行仿真和建模:模块化纳米TCAD仿真框架

Medina-Bailon, Cristina; Dutta, Tapas; Rezaei, Ali; Nagy, Daniel; Adamu-Lema, Fikru; Georgiev, Vihar P; Asenov, Asen

Simulation Study of Surface Transfer Doping of Hydrogenated Diamond by MoO(3) and V(2)O(5) Metal Oxides

MoO(3)和V(2)O(5)金属氧化物对氢化金刚石表面转移掺杂的模拟研究

McGhee, Joseph; Georgiev, Vihar P

Variability Predictions for the Next Technology Generations of n-type Si(x)Ge(1-x) Nanowire MOSFETs

下一代n型Si(x)Ge(1-x)纳米线MOSFET的变异性预测

Lee, Jaehyun; Badami, Oves; Carrillo-Nuñez, Hamilton; Berrada, Salim; Medina-Bailon, Cristina; Dutta, Tapas; Adamu-Lema, Fikru; Georgiev, Vihar P; Asenov, Asen