Different temperatures leakage mechanisms of (Al(2)O(3))(x)(HfO(2))(1-x) gate Dielectrics deposited by atomic layer deposition
采用原子层沉积法制备的(Al₂O₃)(x)(HfO₂)(1-x)栅极介质在不同温度下的漏电机制
期刊:Scientific Reports
影响因子:3.9
doi:10.1038/s41598-025-85686-9
Jia, Yifan; Fu, Yi; Liu, Xiangtai; Wang, Zhan; Jiang, Pengcheng; Lu, Qin; Wang, Shaoqing; Guan, Yunhe; Li, Lijun; Chen, Haifeng; Hao, Yue