日期:
2020 年 — 2026 年
2020
2021
2022
2023
2024
2025
2026
影响因子:

From farm to fork: Microplastic contamination in the meat and dairy supply chain

从农场到餐桌:肉类和乳制品供应链中的微塑料污染

Rahman, Saydur; Sarker, Promit; Datta, Tonni Rani; Maysha, Tasnim Iqbal; Rahman, Samiha; Saha, Writam; Sarker, Aniruddha; Mazumder, Md Anisur Rahman

Curved Anthracenes for Visible-Light Photon Energy Storage via Dewar Isomerization

利用杜瓦异构化法制备弯曲蒽用于可见光光子能量存储

Chakraborty, Subhayan; Choudhuri, Writam S R; Usuba, Junichi; Qiu, Qianfeng; Raju, Cijil; Han, Grace G D

Transformation of threshold volatile switching to quantum point contact originated nonvolatile switching in graphene interface controlled memory devices

石墨烯界面控制存储器件中阈值易失性开关向量子点接触非易失性开关的转变

Wu, Zuheng; Zhao, Xiaolong; Yang, Yang; Wang, Wei; Zhang, Xumeng; Wang, Rui; Cao, Rongrong; Liu, Qi; Banerjee, Writam

Near ideal synaptic functionalities in Li ion synaptic transistor using Li(3)PO(x)Se(x) electrolyte with high ionic conductivity

使用高离子电导率的Li(3)PO(x)Se(x)电解质,锂离子突触晶体管可实现近乎理想的突触功能。

Nikam, Revannath Dnyandeo; Kwak, Myonghoon; Lee, Jongwon; Rajput, Krishn Gopal; Banerjee, Writam; Hwang, Hyunsang

Atomic View of Filament Growth in Electrochemical Memristive Elements

电化学忆阻元件中细丝生长的原子级视图

Lv, Hangbing; Xu, Xiaoxin; Sun, Pengxiao; Liu, Hongtao; Luo, Qing; Liu, Qi; Banerjee, Writam; Sun, Haitao; Long, Shibing; Li, Ling; Liu, Ming

Impact of electrically formed interfacial layer and improved memory characteristics of IrOx/high-κx/W structures containing AlOx, GdOx, HfOx, and TaOx switching materials

电形成界面层对含AlOx、GdOx、HfOx和TaOx开关材料的IrOx/高κx/W结构存储特性的影响及改进

Prakash, Amit; Maikap, Siddheswar; Banerjee, Writam; Jana, Debanjan; Lai, Chao-Sung

Formation polarity dependent improved resistive switching memory characteristics using nanoscale (1.3 nm) core-shell IrOx nano-dots

利用纳米级(1.3 nm)核壳结构IrOx纳米点,通过改变形成极性来改善电阻式开关存储器的特性

Banerjee, Writam; Maikap, Siddheswar; Lai, Chao-Sung; Chen, Yi-Yan; Tien, Ta-Chang; Lee, Heng-Yuan; Chen, Wei-Su; Chen, Frederick T; Kao, Ming-Jer; Tsai, Ming-Jinn; Yang, Jer-Ren