Formation polarity dependent improved resistive switching memory characteristics using nanoscale (1.3 nm) core-shell IrOx nano-dots
利用纳米级(1.3 nm)核壳结构IrOx纳米点,通过改变形成极性来改善电阻式开关存储器的特性
期刊:Nanoscale Research Letters
影响因子:
doi:10.1186/1556-276X-7-194
Banerjee, Writam; Maikap, Siddheswar; Lai, Chao-Sung; Chen, Yi-Yan; Tien, Ta-Chang; Lee, Heng-Yuan; Chen, Wei-Su; Chen, Frederick T; Kao, Ming-Jer; Tsai, Ming-Jinn; Yang, Jer-Ren